Vishay Siliconix SIHG11N80AE-GE3
- SIHG11N80AE-GE3
- Vishay Siliconix
- MOSFET N-CH 800V 8A TO247AC
- Transistors - FETs, MOSFETs - Single
- SIHG11N80AE-GE3 Ficha técnica
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 3223
- Inventário spot/distribuidores autorizados/inventário excedentário de fábrica
- 1 ano de garantia de qualidade 》
- Clique para obter taxas
Part Number SIHG11N80AE-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 800V 8A TO247AC |
Package Tube |
Series E |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 78W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 800 V |
Current - Continuous Drain (Id) @ 25°C 8A (Tc) |
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 804 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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