Vishay Siliconix SI4100DY-T1-GE3
- SI4100DY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 6.8A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4100DY-T1-GE3 Ficha técnica
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 26630
- Inventário spot/distribuidores autorizados/inventário excedentário de fábrica
- 1 ano de garantia de qualidade 》
- Clique para obter taxas
Part Number SI4100DY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 100V 6.8A 8SO |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 6W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) |
Rds On (Max) @ Id, Vgs 63mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4100DY-T1-GE3 Garantias
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Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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