Vishay Siliconix SI2367DS-T1-GE3
- SI2367DS-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 20V 3.8A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2367DS-T1-GE3 Ficha técnica
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1793
- Inventário spot/distribuidores autorizados/inventário excedentário de fábrica
- 1 ano de garantia de qualidade 》
- Clique para obter taxas
Part Number SI2367DS-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 20V 3.8A SOT23-3 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) |
Rds On (Max) @ Id, Vgs 66mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 561 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case TO-236-3, SC-59, SOT-23-3 |
SI2367DS-T1-GE3 Garantias
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Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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