Vishay Siliconix SI1065X-T1-GE3
- SI1065X-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 12V 1.18A SC89-6
- Transistors - FETs, MOSFETs - Single
- SI1065X-T1-GE3 Ficha técnica
- SOT-563, SOT-666
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 1032
- Inventário spot/distribuidores autorizados/inventário excedentário de fábrica
- 1 ano de garantia de qualidade 》
- Clique para obter taxas
Part Number SI1065X-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 12V 1.18A SC89-6 |
Package Tape & Reel (TR) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package SC-89 (SOT-563F) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 236mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 12 V |
Current - Continuous Drain (Id) @ 25°C 1.18A (Ta) |
Rds On (Max) @ Id, Vgs 156mOhm @ 1.18A, 4.5V |
Vgs(th) (Max) @ Id 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 6 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case SOT-563, SOT-666 |
SI1065X-T1-GE3 Garantias
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