Toshiba Semiconductor and Storage RN2910FE,LF(CB
- RN2910FE,LF(CB
- Toshiba Semiconductor and Storage
- TRANS 2PNP PREBIAS 0.1W ES6
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN2910FE,LF(CB Ficha técnica
- SOT-563, SOT-666
- SOT-563, SOT-666
- Lead free / RoHS Compliant
- 22899
- Inventário spot/distribuidores autorizados/inventário excedentário de fábrica
- 1 ano de garantia de qualidade 》
- Clique para obter taxas
Part Number RN2910FE,LF(CB |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS 2PNP PREBIAS 0.1W ES6 |
Package SOT-563, SOT-666 |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package ES6 |
Power - Max 100mW |
Transistor Type 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V |
Frequency - Transition 200MHz |
Resistor - Base (R1) 4.7 kOhms |
Package_case SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage
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