IXYS IXCY01N90E
- IXCY01N90E
- IXYS
- MOSFET N-CH 900V 250MA TO252
- Transistors - FETs, MOSFETs - Single
- IXCY01N90E Ficha técnica
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
Lead free / RoHS Compliant
- 2008
- Inventário spot/distribuidores autorizados/inventário excedentário de fábrica
- 1 ano de garantia de qualidade 》
- Clique para obter taxas
Part Number IXCY01N90E |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 900V 250MA TO252 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 40W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 900 V |
Current - Continuous Drain (Id) @ 25°C 250mA (Tc) |
Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id 5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 133 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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